Personal Website: http://ti.arc.nasa.gov/profile/jcelaya/
Last Added Resources
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Precursor Parameter Identification for Insulated Gate Bipolar Transistor (IGBT) Prognostics
A Publication, Jose Celaya Galvan's Collection - 11 years, 2 months ago
Shared By: Jose Celaya Galvan
Precursor parameters have been identified to enable development of a prognostic approach for insulated gate bipolar transistors (IGBT). The IGBT were subjected to thermal overstress ...
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A Publication, Jose Celaya Galvan's Collection - 11 years, 3 months ago
Shared By: Jose Celaya Galvan
An approach for predicting remaining useful life of power MOSFETs (metal oxide field effect transistor) devices has been developed. Power MOSFETs are semiconductor switching devices ...
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Prognostics Approach For Power Mosfet Under Thermal-Stress Aging
A Publication, Jose Celaya Galvan's Collection - 11 years, 3 months ago
Shared By: Jose Celaya Galvan
The prognostic technique for a power MOSFET presented in this paper is based on accelerated aging of MOSFET IRF520Npbf in a TO-220 package. The methodology ...
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